Overview
III-V Lab is a French joint venture research laboratory (GIE) co-founded by Nokia Bell Labs France, Thales Group, and CEA-Leti, located on the Thales Research & Technology campus in Palaiseau, Essonne, near Paris. Operates a cleanroom for InP, GaAs, and GaN compound semiconductor device fabrication. Research focus: high-electron-mobility transistors (HEMTs) for THz and millimeter-wave applications, laser diodes, photodetectors, InP photonic integrated circuits (PICs), and monolithic microwave integrated circuits (MMICs). Provides foundry access for partner R&D programs. Key European capability for InP-based PICs for 5G/6G fronthaul, optical coherent transceivers, and defense radar. Founded in 2004 by Alcatel and Thales as a French GIE (CEA joined at the end of 2010), its Palaiseau facilities include about 4,000 m2 of cleanrooms for III-V semiconductor R&D and pilot production on GaAs, InP, and GaN. Key facility details include: The facility is situated at Campus Polytechnique, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France. It focuses on Compound Semiconductor and 100, 150, 250 process nodes on 50mm, 75mm, 100mm wafers. Production at this facility commenced in 2004.
Technology
About III-V Lab
III-V Lab (GIE III-V Lab) is a French joint venture research laboratory co-founded by Nokia Bell Labs France and Thales Group, located at the Polytechnique campus in Palaiseau, France. Founded 2004. Operates an InP, GaAs, and GaN compound semiconductor research foundry for HEMTs, laser diodes, InP PICs, and MMICs targeting THz/mm-wave, coherent optical, 5G/6G, and defense radar applications.