Kaga Toshiba Electronics 300mm Power Fab

Overview

Toshiba's new 300mm (12-inch) wafer fabrication facility for power semiconductors, operated by Kaga Toshiba Electronics Corporation in Nomi-shi, Ishikawa Prefecture, Japan. The fab manufactures power MOSFETs and IGBTs. Toshiba Electronic Devices & Storage announced completion of the new building on 23 May 2024 and began Phase-1 mass production in the second half of fiscal 2024 (by March 2025). At full Phase-1 operation, Toshiba's power-semiconductor production capacity rises to about 2.5 times its fiscal-2021 level. Construction is staged in two phases to pace investment against market demand; the timing of Phase 2 will depend on market trends. Key facility details include: The facility is situated at Nomi-shi, Ishikawa Prefecture, Japan (Kaga Toshiba Electronics Corp.). It focuses on Analog / Power on 300mm wafers. Production at this facility commenced in 2025.