Nanya Technology - Fab 3A

Overview

Nanya Technology's main existing 300mm (12-inch) DRAM fab, in the Hwa-Ya (Huaya) Technology Park, Guishan District, Taoyuan, Taiwan -- adjacent to the company's headquarters at 669 Fuxing 3rd Road (the park straddles the Guishan/Taishan boundary). Nanya Technology, founded in March 1995, is the semiconductor arm of Taiwan's Formosa Plastics Group and one of the world's larger DRAM makers. Fab 3A broke ground in March 2006 and began mass-production wafer starts in the fourth quarter of 2007 on a 70nm process co-developed with Qimonda/Infineon, at a total investment of NT$83.9 billion (about US$2.8 billion). The fab has since migrated across successive generations to Nanya's current 1B/1C-nm-class DRAM, producing DDR4, DDR5, mobile, consumer and specialty DRAM, and as of 2025-2026 runs at full utilisation, with major capacity growth deferred until the separate NT$300 billion Nanlin (Taishan) EUV fab ramps from 2027. Per-fab monthly wafer capacity is not consistently disclosed. Distinct from the co-located former Inotera 300mm fabs, which Micron acquired in 2016 (now Micron Fab 16). Key facility details include: The facility is situated at Hwa-Ya Technology Park, 669 Fuxing 3rd Road, Guishan District, Taoyuan City 333, Taiwan. It focuses on DRAM on 300mm wafers. This site represents an estimated investment of $2.8B. Production at this facility commenced in 2007.