Renesas Goleta GaN

Overview

GaN-on-Si pilot and R&D fab in Goleta, California, originally built by Transphorm (a UCSB spinoff). Renesas completed acquisition of Transphorm for $339M in 2024. Uses 150mm and 200mm Si substrates for GaN power devices. Primary GaN volume production runs at Transphorm's Aizu facility in Japan. Goleta serves as R&D and pre-production line. Key facility details include: The facility is situated at Goleta, California, USA. It focuses on Compound Semiconductor on 150mm, 200mm wafers.