Overview
SiCSem's planned fab in Bhubaneswar, Odisha is one of India's first silicon carbide (SiC) compound-semiconductor facilities, approved under the India Semiconductor Mission. It is designed to build 150mm SiC power devices for automotive, industrial and energy applications, part of India's push to establish domestic wide-bandgap power-semiconductor manufacturing. Key facility details include: The facility is situated at Bhubaneswar, Odisha, India. It focuses on Compound Semiconductor, SiC on 150mm wafers. This site represents an estimated investment of $0.05B. Production at this facility is expected to begin in 2027.