Overview
TRUMPF Photonics Inc. operates a compound semiconductor laser diode wafer fab in Cranbury, New Jersey. Produces high-power InGaAs diode laser bars and chips (single emitters, laser bars, stacked arrays) for pump lasers, materials processing, and direct-diode applications. The Cranbury facility houses MOCVD epitaxial growth, cleanroom wafer processing, and testing. Part of TRUMPF Group's laser division; wafers produced here feed into TRUMPF's industrial laser systems. The site was originally founded as Spectra-Physics Semiconductors and has been part of TRUMPF since 1999. Key facility details include: The facility is situated at 2601 US-130, Cranbury, NJ 08512, USA. It focuses on Compound Semiconductor on 75mm, 100mm wafers. Production at this facility commenced in 1999.
Technology
About TRUMPF Photonics
TRUMPF Photonics Inc. is a US subsidiary of TRUMPF Group (Germany), operating a compound semiconductor laser diode fab in Cranbury, New Jersey. Produces high-power InGaAs diode laser bars and stacks for pump lasers, materials processing, and direct-diode applications. Originally founded as Spectra-Physics Semiconductors; part of TRUMPF since 1999.