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AscenPower (Guangdong Xinyueneng Semiconductor)

AscenPower Β· Nansha District, Guangzhou, China
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$1.07B
Investment
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10,000
Wafers / Month
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2023
Production Start
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150mm, 200mm
Wafer Size

Overview

AscenPower (Guangdong Xinyueneng Semiconductor) operates a SiC power device fab in Guangzhou's Nansha District, settled in 2021 with total investment of 7.5 billion yuan (roughly USD 1.07 billion): Phase 1 is a 240,000-wafer/year 6-inch (150mm) SiC line, Phase 2 a 240,000-wafer/year 8-inch (200mm) SiC line, making IGBTs, SiC SBD/JBS diodes, and SiC MOSFETs for EVs, solar, and smart grid. The line connected in March 2023 and reached mass production in June 2023, with 10,000 wafers/month achieved by year-end 2023. Key facility details include: The facility is situated at Nansha District, Guangzhou, China. It focuses on Automotive / Specialty, SiC, Analog / Power on 150mm, 200mm wafers. This site represents an estimated investment of $1.07B and a production capacity of 10,000 wafers per month. Production at this facility commenced in 2023.

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