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Diodes GFAB (Greenock)

Diodes Incorporated Β· Greenock, Scotland, United Kingdom
πŸ’°
N/A
Investment
πŸ’Ώ
21,666
Wafers / Month
πŸ“…
1970
Production Start
πŸ”΅
150mm, 200mm
Wafer Size

Overview

GFAB was originally built by National Semiconductor in 1970, later operated by Texas Instruments (following TI's 2011 acquisition of National Semiconductor), and acquired by Diodes Incorporated in April 2019. The 318,782 sq ft site runs 150mm and 200mm analog, CMOS, BiCMOS, and discrete production lines with a potential capacity of up to 21,666 wafer starts per month (up to 256,000 8-inch-equivalent layers/month depending on product mix), employing 300+ people. Key facility details include: The facility is situated at Greenock, Scotland, United Kingdom. It focuses on Analog / Power, Analog / Power on 150mm, 200mm wafers. This site represents a production capacity of 21,666 wafers per month. Production at this facility commenced in 1970.

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