Ferdinand-Braun-Institut

Overview

Ferdinand-Braun-Institut (FBH) is a Leibniz Association research institute in Berlin-Adlershof. Operates a 1,500m² cleanroom for GaN-on-SiC, GaN-on-Si, and GaAs device fabrication. Key technology areas: GaN high-electron-mobility transistors (HEMTs) for power amplifiers and power switching, GaAs pseudomorphic HEMTs, high-power diode lasers (single emitters, bars, stacks up to kW), and laser modules. Products and services: foundry runs for III-V devices (via JePPIX and internal MPW), custom laser systems, power amplifier MMICs. The institute collaborates closely with industry and is part of the Berlin partner network for photonics and power electronics. Key facility details include: The facility is situated at Gustav-Kirchhoff-Strasse 4, 12489 Berlin-Adlershof, Germany. It focuses on Compound Semiconductor and 100, 150, 250 process nodes on 50mm, 75mm, 100mm wafers. Production at this facility commenced in 1992.