Mitsubishi Electric Power Device Works
Overview
Mitsubishi Electric's new silicon-carbide (SiC) power-semiconductor wafer plant, part of its Power Device Works and located in the Shisui area of Kikuchi City, Kumamoto Prefecture (adjacent to Koshi City). The six-story, roughly 42,000 sq m facility handles front-end (wafer) processing of 8-inch (200mm) SiC power devices for the electric-vehicle and industrial markets. Announced in March 2023 with an investment of about JPY 100 billion (~US$680 million), it held a completion ceremony on 1 October 2025 and began operations in November 2025, with the wafer production line now ramping up. Full-scale mass production is targeted for 2027; Mitsubishi Electric has said the number of production lines installed will depend on market conditions, and further equipment enhancement has been deferred to fiscal 2031 and beyond amid slower-than-expected EV-demand growth. Key facility details include: The facility is situated at Shisui, Kikuchi City, Kumamoto Prefecture, Japan. It focuses on SiC, Analog / Power on 200mm wafers. This site represents an estimated investment of $0.68B. Production at this facility commenced in 2025.
Mitsubishi Electric Power Device Works
Mitsubishi Electric's primary power semiconductor wafer fab site, acquired from Sharp in 2021.
Facility Phases
Technology
About Mitsubishi Electric
Mitsubishi Electric is a diversified Japanese industrial conglomerate spanning factory automation, power systems, and electronics. Its Power Device Works in Fukuoka is a key center for IGBT and power semiconductor module manufacturing serving automotive, industrial, and energy markets.