Overview
Nanjing Guosheng Electronic Co., Ltd. (Nanjing, China), tracing to CETC's 55th Research Institute materials work dating to the 1980s and formally established Oct 2003, is a Chinese semiconductor epitaxial wafer materials supplier (not a discrete-device IDM as previously listed): it grows and supplies silicon, silicon carbide, and GaN-on-Si epitaxial wafers from 4-inch to 12-inch, including foundry-style IC epi services. A new epitaxial materials industrial base in Nanjing began production in November 2023 (Phase 1 investment approx. 1.93 billion yuan, roughly 270 million USD), adding 4.56 million 8-12-inch silicon epi wafers per year and 126,000 6-8-inch compound epi wafers per year of capacity; first SiC epi wafers shipped December 2023. Key facility details include: The facility is situated at Nanjing, Jiangsu, China. It focuses on Compound Semiconductor, SiC, GaN on 100mm, 150mm, 200mm, 300mm wafers. This site represents an estimated investment of $0.27B and a production capacity of 250,000 wafers per month. Production at this facility commenced in 2003.
Technology
About Nanjing Guosheng Electronic Co.
Nanjing Guosheng Electronic Co., Ltd. (εδΊ¬ε½ηη΅εζιε ¬εΈ) is a Chinese state-affiliated power semiconductor IDM in Nanjing, Jiangsu. Manufactures power diodes, Schottky diodes, thyristors (SCRs), triacs, and rectifier modules on 4-inch to 8-inch silicon wafers for industrial power supplies, motor drives, renewable energy, and traction applications.