Toshiba Himeji Semiconductor Fab

Overview

Toshiba Electronic Devices & Storage's Himeji Semiconductor Factory, in Taishi-cho, Ibo-gun, Hyogo Prefecture, Japan, established in April 1982 as a front-end wafer fab for discrete semiconductors (power semiconductors and small-signal devices). It runs 150mm (6-inch) wafer lines making power MOSFETs, IGBTs/IEGTs, bipolar transistors, diodes, and a 6-inch silicon-carbide (SiC) line, alongside back-end assembly/test for automotive power devices. Toshiba's 2011 facility reorganization kept Himeji as a dedicated front-end power/small-signal wafer site (distinct from the newer 300mm power fab at Kaga Toshiba Electronics in Ishikawa Prefecture). Toshiba has since expanded Himeji twice: a new back-end building for automotive power semiconductors (construction from Dec 2022, completed March 2025, more than doubling automotive power-semiconductor capacity against FY2022 levels) and a new front-end power-semiconductor manufacturing building (groundbreaking Feb 2024, production launch spring 2025). Neither expansion's investment amount or wafers/month figure has been publicly disclosed. Key facility details include: The facility is situated at 300 Ikaruga, Taishi-cho, Ibo-gun, Hyogo Prefecture 671-1561, Japan. It focuses on Analog / Power on 150mm wafers. Production at this facility commenced in 1982.