Overview
CXMT Hefei (Fab A) in Anhui province is the flagship 300mm fab of ChangXin Memory Technologies, China's first homegrown volume DRAM maker. Construction began in 2017 and the fab reached DDR4 mass production in May 2019 at a 19nm-class node, later refined toward 17–18nm for DDR4, LPDDR4 and newer products. It is one of China's largest memory fabs, with capacity on the order of 100,000+ wafers per month. Key facility details include: The facility is situated at No. 388, Xingye Avenue, Hefei, Anhui, China. It focuses on Memory, DRAM and 19, 17 process nodes on 300mm wafers. This site represents an estimated investment of $22B and a production capacity of 120,000 wafers per month. Production at this facility commenced in 2019.
About CXMT
ChangXin Memory Technologies (CXMT) is a leading Chinese semiconductor company specializing in the design and manufacturing of dynamic random-access memory (DRAM). CXMT is a key driver of memory innovation in Asia, producing advanced DDR4, LPDDR4, and DDR5 products.