Overview
Nexperia's wafer fab in Hamburg, Germany. Per Nexperia's own manufacturing page the fab has existed at the site since 1953 (with a Valvo / Philips Semiconductors / NXP lineage before Nexperia was spun off from NXP's standard-products division in 2017) and is 'the largest wafer fab optimized for bipolar small-signal and power discrete semiconductors in the world.' It produces more than 1,000,000 wafers per year on 6-inch and 8-inch lines, equating to roughly 100 billion devices per year, and is Nexperia's largest factory for small-signal diodes and transistors. GaN FETs were added to the portfolio in 2019 and SiC diodes and SiC MOSFETs in 2023. In June 2024 Nexperia announced a US$200 million (EUR184 million) investment at the Hamburg-Lokstedt site to establish wide-bandgap (SiC and GaN) production; initial lines for high-voltage GaN D-Mode transistors and SiC diodes started in June 2024, with cost-efficient 200mm SiC-MOSFET and low-voltage GaN-HEMT lines to follow. The ~83,000 wafers/month capacity figure is derived from the official >1,000,000 wafers/year figure. Key facility details include: The facility is situated at Stresemannallee 101, 22529 Hamburg, Germany. It focuses on Analog / Power, GaN, SiC on 150mm, 200mm wafers. This site represents a production capacity of 83,000 wafers per month. Production at this facility commenced in 1953.