Kaohsiung Science Park Campus - Module B
Overview
Winbond's newly-announced second fab (Module B) at its Kaohsiung Science Park site in the Southern Taiwan Science Park (Luzhu District), on the same campus as the existing Module A specialty-DRAM fab. Announced in August 2026, the 12-inch (300mm) DRAM fab is planned with an initial installed capacity of about 10,000 wafers per month, scaling to roughly 50,000 wafers per month at full build-out. Winbond intends to adopt extreme-ultraviolet (EUV) lithography in the later phases of the expansion to scale up to more advanced DRAM nodes. Construction is scheduled to start in January 2027, with pilot production targeted for the end of 2029 and volume production from 2030. The company has not disclosed the total capital expenditure for the expansion. Key facility details include: The facility is situated at Kaohsiung Science Park, Lujhu District, Kaohsiung, Taiwan. It focuses on DRAM on 300mm wafers. This site represents a production capacity of 50,000 wafers per month. Production at this facility is expected to begin in 2029.
Kaohsiung Science Park Campus
* This is a sum of all 2 facility phases (current & planned).
Facility Phases
Technology
About Winbond Electronics
Winbond Electronics is a Taiwan-based memory and logic IC maker, among the few companies worldwide with proprietary products and technology in both segments. Its specialty DRAM, NOR flash, and TrustME secure flash products serve handheld, automotive, and industrial electronics.