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Micron Hiroshima - Fab 15

Micron Technology Β· Higashihiroshima, Hiroshima, Japan
πŸ’°
$3.6B
Investment
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N/A
Wafers / Month
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2025
Production Start
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300mm
Wafer Size

Overview

Micron Fab 15 in Higashihiroshima is an active 300mm DRAM fab acquired from bankrupt Elpida Memory in 2013. Producing 1-gamma node DRAM and HBM -- Micron's first-ever HBM production wafer was made here. ~80% of required materials sourced from Japan. A separate $9.3B expansion (HBM for AI) broke ground in July 2026. At acquisition (July 2013), the Elpida Hiroshima fab and Rexchip Taiwan fab together produced more than 185,000 300mm wafers per month, increasing Micron's total capacity by ~45%. Key facility details include: The facility is situated at Higashihiroshima, Hiroshima, Japan. It focuses on DRAM, HBM and 1-gamma process nodes on 300mm wafers. This site represents an estimated investment of $3.6B. Production at this facility commenced in 2025.

Facility Complex

Micron Hiroshima

$12.9B Projected Investment
TBA Projected WPM Capacity

* This is a sum of all 2 facility phases (current & planned).

Technology

DRAMHBM 1-gamma
Micron Technology

About Micron Technology

Micron is a world leader in innovative memory and storage solutions. Through its global brands, Micron and Crucial, the company delivers a rich portfolio of high-performance DRAM, NAND, and NOR memory and storage products.

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