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Samsung Cheonan Campus - HBM Dedicated

Samsung Β· Cheonan-si, Chungcheongnam-do, South Korea
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Investment
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Wafers / Month
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Production Start
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300mm
Wafer Size

Overview

Samsung Cheonan is the flagship site for High Bandwidth Memory (HBM) packaging. Following the acquisition of additional facilities at the site, it has become the global center for Samsung's HBM3/HBM3E backend production. Samsung is expanding HBM back-end capacity at Cheonan toward monthly capacities of 231,000 thermal-compression-bonding (TCB) units and 19,500 hybrid-copper-bonding (HCB) units by the end of 2026, and chairman Jay Y. Lee inspected the campus's C1 and C2 lines in June 2026 amid the HBM4 ramp. Under the June 2026 Chungcheong investment plan, Samsung intends to invest 56 trillion won across the Cheonan and Onyang packaging campuses to build cutting-edge HBM capacity. Key facility details include: The facility is situated at Cheonan-si, Chungcheongnam-do, South Korea. It focuses on Advanced Packaging and HBM3, HBM3E process nodes on 300mm wafers.

Facility Complex

Samsung Cheonan Campus

Samsung's primary hub for advanced memory packaging, including HBM and WLP.

$0.23B Total Investment
N/A Total WPM Capacity

Technology

Advanced Packaging HBM3HBM3E
Samsung

About Samsung

Samsung Electronics is a global leader in technology, opening new possibilities for people everywhere. Through relentless innovation and discovery, we are transforming the worlds of TVs, smartphones, wearable devices, and semiconductors.

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