Overview
A new ~109,000 sqm R&D complex at Samsung's Giheung campus, backed by a planned KRW 20 trillion (~$15B) investment through 2028. The facility will conduct advanced research on next-generation memory and system semiconductors to help overcome scaling limitations, working in tandem with Samsung's Hwaseong R&D and Pyeongtaek production complexes. Samsung held the tool-in ceremony for the complex (NRD-K) in November 2024, and a dedicated R&D line began operation in mid-2025; the facility is planned to house high-NA EUV lithography and wafer-bonding infrastructure for next-generation memory such as 3D DRAM, with the roughly 20 trillion won investment running through 2030 per November 2024 reporting. Key facility details include: The facility is situated at Giheung Campus, Yongin, Gyeonggi-do, South Korea. It focuses on Logic / Foundry, Memory. This site represents an estimated investment of $15B. Production at this facility is expected to begin in 2028.
Samsung Giheung
Samsung's original Korean semiconductor campus; produced the world's first 64Mb DRAM in 1992.
* This is a sum of all 2 facility phases (current & planned).
Facility Phases
Technology
About Samsung
Samsung Electronics is a global leader in technology, opening new possibilities for people everywhere. Through relentless innovation and discovery, we are transforming the worlds of TVs, smartphones, wearable devices, and semiconductors.