$7B
Investment
N/A
Wafers / Month
2014
Production Start
300mm
Wafer Size
Overview
Samsung Xi'an X1 is Samsung's first NAND flash memory fab in China, breaking ground in September 2012 and reaching full-scale production of 3D V-NAND in May 2014 after a phased $7 billion investment. Key facility details include: The facility is situated at Xi'an, China. It focuses on NAND on 300mm wafers. This site represents an estimated investment of $7B. Production at this facility commenced in 2014.
Technology
About Samsung
Samsung Electronics is a global leader in technology, opening new possibilities for people everywhere. Through relentless innovation and discovery, we are transforming the worlds of TVs, smartphones, wearable devices, and semiconductors.
Sources
Data Quality: 65%